Magneto-resistance effect element including a damping factor...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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Reexamination Certificate

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07821748

ABSTRACT:
A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.

REFERENCES:
patent: 5608593 (1997-03-01), Kim et al.
patent: 5668688 (1997-09-01), Dykes et al.
patent: 6074743 (2000-06-01), Araki et al.
patent: 6080445 (2000-06-01), Sugiyama et al.
patent: 6132892 (2000-10-01), Yoshikawa et al.
patent: 6159593 (2000-12-01), Iwasaki et al.
patent: 6169303 (2001-01-01), Anthony
patent: 6313973 (2001-11-01), Fuke et al.
patent: 6411476 (2002-06-01), Lin et al.
patent: 6452763 (2002-09-01), Gill
patent: 6511855 (2003-01-01), Anthony
patent: 6686068 (2004-02-01), Carey et al.
patent: 6707649 (2004-03-01), Hasegawa et al.
patent: 6775111 (2004-08-01), Lin et al.
patent: 6781799 (2004-08-01), Seyama et al.
patent: 6784509 (2004-08-01), Yuasa et al.
patent: 6785103 (2004-08-01), Cornwell et al.
patent: 6788499 (2004-09-01), Lin et al.
patent: 6833981 (2004-12-01), Suwabe et al.
patent: 6905780 (2005-06-01), Yuasa et al.
patent: 6927952 (2005-08-01), Shimizu et al.
patent: 6937447 (2005-08-01), Okuno et al.
patent: 6961224 (2005-11-01), Pinarbasi
patent: 7002781 (2006-02-01), Sugawara
patent: 7071522 (2006-07-01), Yuasa et al.
patent: 7072153 (2006-07-01), Koui et al.
patent: 7116529 (2006-10-01), Yoshikawa et al.
patent: 7180714 (2007-02-01), Gill
patent: 7221545 (2007-05-01), Gill
patent: 7223485 (2007-05-01), Yuasa et al.
patent: 7245462 (2007-07-01), Huai et al.
patent: 7331100 (2008-02-01), Li et al.
patent: 7336453 (2008-02-01), Hasegawa et al.
patent: 7379278 (2008-05-01), Koui et al.
patent: 7390529 (2008-06-01), Li et al.
patent: 7423850 (2008-09-01), Gill et al.
patent: 7426098 (2008-09-01), Yuasa et al.
patent: 7443004 (2008-10-01), Yuasa et al.
patent: 7514117 (2009-04-01), Fukuzawa et al.
patent: 7525776 (2009-04-01), Fukuzawa et al.
patent: 2001/0040781 (2001-11-01), Tanaka et al.
patent: 2002/0048127 (2002-04-01), Fukuzawa et al.
patent: 2002/0048128 (2002-04-01), Kamiguchi et al.
patent: 2002/0051380 (2002-05-01), Kamiguchi et al.
patent: 2002/0073785 (2002-06-01), Prakash et al.
patent: 2002/0150791 (2002-10-01), Yuasa et al.
patent: 2002/0151791 (2002-10-01), Nozaki et al.
patent: 2003/0090844 (2003-05-01), Shimizu et al.
patent: 2003/0123200 (2003-07-01), Nagasaka et al.
patent: 2003/0128481 (2003-07-01), Seyama et al.
patent: 2003/0231436 (2003-12-01), Nishiyama
patent: 2004/0021990 (2004-02-01), Koui et al.
patent: 2004/0201929 (2004-10-01), Hashimoto et al.
patent: 2005/0111145 (2005-05-01), Yuasa et al.
patent: 2005/0168887 (2005-08-01), Yuasa et al.
patent: 2006/0034022 (2006-02-01), Fukuzawa et al.
patent: 2006/0050444 (2006-03-01), Fukuzawa et al.
patent: 2006/0071287 (2006-04-01), Koui et al.
patent: 2006/0098353 (2006-05-01), Fukuzawa et al.
patent: 2006/0181814 (2006-08-01), Koui et al.
patent: 2007/0014054 (2007-01-01), Zhang et al.
patent: 2007/0172690 (2007-07-01), Kim et al.
patent: 2007/0223150 (2007-09-01), Fukuzawa et al.
patent: 1419232 (2003-05-01), None
patent: 1431651 (2003-07-01), None
patent: 08-49063 (1996-02-01), None
patent: 11-86229 (1999-03-01), None
patent: 11-121832 (1999-04-01), None
patent: 11-154609 (1999-06-01), None
patent: 11/296820 (1999-10-01), None
patent: 2000-228004 (2000-08-01), None
patent: 2001-94173 (2001-04-01), None
patent: 2002-76473 (2002-03-01), None
patent: 2002-208744 (2002-07-01), None
patent: 2003-60263 (2003-02-01), None
patent: 2004-153248 (2004-05-01), None
patent: 2005-109378 (2005-04-01), None
Covington et al, “Current-induced magnetization dynamics in current perpendicular to the plane spin valves”, Physical Review B 69:184406 (2004), pp. 1-8.
Covington et al, “Spin transfer effects in current perpendicular to the plane spin valves”, Journal of Magnetism and Magnetic Materials 287:325-332 (2005).
Yuasa et al, “Output enhancement of spin-valve giant magnetoresistance in current-perpendicular-to-plane geometry”, Journal of Applied Physics 92(5):2646-2650 (2002).
Fukuzawa et al, “Large magnetoresistance ratio of 10% by Fe50CO50layers for current-confined-path current-perpendicular-to-plane giant magnetoresistance spin-valve films”, Applied Physics Letters 87:082507 (2005), 3 pages.
M. Takagishi, et al., “The Applicability of CPP-GMR heads for Magnetic Recording”, IEEE Transactions on Magnetics, vol. 38, No. 5, Sep. 2002; pp. 2277-2282.
H. Yuasa et al., “Output enhancement of spin-valve giant magnetoresistance in current-perpendicular-to-plane geometry,” Journal of Applied Physics, vol. 92, No. 5, Sep. 1, 2002, pp. 2646-2650.
Hideaki Fukuzawa, et al., “MR Ratio Enhancement by NOL Current-Confined-Path Structures in CPP Spin Valves,” IEEE Transactions on Magnetics, vol. 40, No. 4, Jul. 2004, pp. 2236-2238.
K. Nagasaka et al., “Giant magnetroresistance properties of specular spin valve films in a current perpendicular to plane structure,” Journal of Applied Physics, vol. 89, No. 11, Jun. 1, 2001, pp. 6943-6345.
Fukuzawa et al., “Nanoconstricted structure for current-confined path in current-perpendicular-to-plane spin valves with high magnetoresistance,” Journal of Applied Physics 97, 10C509 (2005).
K. Meguro et al., “Spin-valve films using synthetic ferrimagnets for pinned layer,” IEEE Trans. Mag., 35(5), Sep. 1999, 2925-2927 (Abstract).
C. Vouille et al., “Inverse CPP-GMR in (A/Cu/Co/Cu) multilayers (A-NiCr, FeCr, FeV) and discussion of the spin asymmetry induced by impurities,” J. Appl. Phys., vol. 81, Issue 8 4573 (1997) (Abstract).
J. Bass et al., “Current-perpendicular (CPP) magnetoresistance in magnetic metallic multilayers,” J. Magn. Magn. Mater, 200 (1-3); 274-289 (Oct. 1999). (Abstract).
L. Vila et al., “Current Perpendicular Magnetoresistances of NiFeCo and NiFe ‘Permalloys,’” Journal of Applied Physics, vol. 87, No. 12, pp. 8610-8614 (Jun. 15, 2000). (Abstract).
A.C. Reilly et al., “Perpendicular giant magnetoresistance of Co91/Feg/Cu exchange-biased spin-valves: further evidence for a unified picture,” J. Magn. Magn. Mater, V. 195, No. 2, pp. L269-274 (1999). (Abstract).

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