Magneto-resistance effect element bar exposure method

Details Magneto-resistance effect element bar exposure method Magneto-resistance effect element bar exposure method

2007-03-20

2007-03-20

McPherson, John A (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

C430S296000, C430S319000, C430S320000

Reexamination Certificate

active

10643917

ABSTRACT:
The present invention provides an MR element bar that permits the fabrication of MR elements in which a variation in characteristics is suppressed, as well as an MR element bar exposure method and formation method enabling the fabrication of the MR element bar. The MR element bar exposure method according to the present invention comprises the steps of: detecting the positions of a plurality of alignment marks P1to P4formed on a wafer W; correcting an exposure position correction region R on the basis of the positions of detected alignment marks P1′ to P4′; and exposing a resist which is formed on the wafer W, wherein an MR element bar region B comprises a plurality of MR elements (patterns MRE) aligned in the longitudinal direction of the region B, and one exposure position correction region R is established for one MR element bar region B.

REFERENCES:
patent: 6003223 (1999-12-01), Hagen et al.
patent: 2002/0013996 (2002-02-01), Okada et al.
patent: A-2002-56514 (2002-02-01), None

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