Dynamic magnetic information storage or retrieval – Head – Hall effect
Patent
1998-03-12
2000-04-18
Klimowicz, William
Dynamic magnetic information storage or retrieval
Head
Hall effect
G11B 539
Patent
active
060522623
ABSTRACT:
A magneto-resistance effect element comprising a spin valve film including a first magnetic layer, a second magnetic layer and a non-magnetic layer interposed between the first magnetic layer and the second magnetic layer. Among the first and the second magnetic layers, in at least one of the magnetic layers, close-packed faces of crystal grains which constitute the magnetic layer are isotropically dispersed. Such a magnetic layer, by setting a film thickness of an under layer having an identical crystal structure with the magnetic layer at 2.0 nm or less and by dispersing isotropically close-packed faces of crystal grains constituting the under layer, can be obtained with reproducibility. According to a magneto-resistance effect element comprising such a spin valve film, while maintaining a large MR change rate, for example, magnetostriction constant can satisfy such a low magnetostriction as 1.times.10.sup.-6 or less. Further, excellent soft magnetic property can be provided.
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Fukuzawa Hideaki
Iwasaki Hitoshi
Kamiguchi Yuzo
Sahashi Masashi
Saito Akiko
Kabushiki Kaisha Toshiba
Klimowicz William
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