Magneto-optic memory medium and a method for producing the same

Stock material or miscellaneous articles – Composite – Of inorganic material

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428212, 428213, 428332, 428336, 428694NF, 428694DE, 428694XS, 428900, 427128, 427129, 427130, 427131, 2041921, 20419212, 2041922, 20419226, G11B 566

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056436874

ABSTRACT:
A magneto-optic memory medium including a first dielectric layer having a first main surface and a second main surface; a second dielectric layer for covering the first main surface of the first dielectric layer; and a magneto-optic memory layer for covering the second dielectric layer. The first dielectric layer is formed of an oxide having a refractive index in the range of 2.4 or more and 3.5 or less, and the second dielectric layer is formed of a material containing no oxygen. The magneto-optic memory medium is produced by the steps of forming a first layer by performing reactive sputtering in an atmosphere of a first sputter gas using a material containing a first element as a target; switching the first sputter gas to a second sputter gas; forming a second layer on the first layer by performing reactive sputtering in an atmosphere of the second sputter gas using a material containing the first element as a target; and forming a magneto-optic memory layer on the second dielectric layer.

REFERENCES:
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patent: 4775603 (1988-10-01), Fujii
patent: 4800112 (1989-01-01), Kano et al.
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patent: 5228024 (1993-07-01), Moon et al.
English Abstract of JP--61-227,243 dated Sep. 10, 1986.
Tu Chen et al., "An Investigation of Amorphous Tb-Fe Thin Films for Magneto-Optic Memory Application", IEEE. Transaction on Magnetics, vol. MAG-16, No. 5, Sep. 1980, pp. 1194-1196.

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