Magneto-optic memory element

Details Magneto-optic memory element Magneto-optic memory element

1984-09-10

1986-09-09

Lesmes, George F.

Stock material or miscellaneous articles

Structurally defined web or sheet

Including components having same physical characteristic in...

428216, 428469, 428472, 428694, 428698, 428900, G11B 724

Patent

active

046109129

ABSTRACT:
A magneto-optic memory element includes a transparent substrate, a first transparent nitride film, a GdTbFe recording layer, a second transparent nitride film, and a reflection film formed in this order. The first transparent nitride film has an index of refraction higher than that of the second transparent nitride film. In a preferred form, the first transparent nitride film is a SiN film having the index of refraction of about 2.0, and the second transparent nitride film is an AlN film having the index of refraction of about 1.8 to 1.9.

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Egashira et al., Journal of Applied Physics, vol. 48, No. 8, Aug. 1974, p. 3643.

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