Magneto-optic memory element

Details Magneto-optic memory element Magneto-optic memory element

1985-04-10

1988-01-12

Lesmes, George F.

Stock material or miscellaneous articles

Nonparticulate element embedded or inlaid in substrate and...

428 66, 428457, 428694, 428900, 430945, G11B 724

Patent

active

047191376

ABSTRACT:
A magneto-optic memory element includes a GdTbFe recording layer sandwiched between a pair of transparent AlN dielectric layers. At least one of the pair of transparent AlN dielectric layers is extended to have a size larger than the GdTbFe recording layer so as to cover the peripheral edge of the GdTbFe recording layer, thereby protecting the GdTbFe recording layer from oxygen and moisture. An Al-Ni alloy reflection film is formed on one of the pair of transparent AlN dielectric layers in order to increase the apparent Kerr rotation angle produced by the magneto-optic memory element.

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Mansuripur et al., "Optimum Disk Structures", IEEE Transactions on Magnetics, vol. MAG-18, No. 6, Nov. 1982, p. 1241.

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