Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Patent
1995-12-05
1998-09-15
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
257422, 257425, 257430, 257431, H01L 2982, H01L 4300
Patent
active
058083499
ABSTRACT:
A strong magnetic field is applied to a photoconductive semiconductor switch to make the opening time of the switch independent of the recombination time of the photoionized semiconductor. As a result, the switch is capable of shaping current pulses with the fidelity of an illuminating optical pulse used to activate the switch. The strong magnetic field applied to the photoconductive semiconductor switch has a strength satisfying the relationship .mu.B>1, where .mu. is the mobility of the semiconductor (in m.sup.2 /Volt Sec) and B the magnetic field (in Tesla). Such a switch acts as an insulator (magnetic insulation) to an applied electric field except during the time that the light incident thereon generates electron-hole pairs. During that time, a polarization current, proportional to the externally induced pair production rate, flows and the magnetic insulation is broken. The minimal system response time is controlled by the gyrofrequency of the carriers. The response time is shorter than one picosecond for materials with small carrier effective mass and magnetic fields of one Tesla.
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Grove, Physics and Technology of Semiconductor Devices, John Wiley & Sons, Inc. New York, 1967, pp. 37-110.
Steele, "Magnetic Tuning of Gunn Effect Oscillators", RCA Technical Notes, No. 663, Nov. 1965, pp. 1-2.
APTI Inc.
Mintel William
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