Magnetically lined conductors

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257S425000, C365S171000

Reexamination Certificate

active

10249528

ABSTRACT:
A conductor with improved magnetic field per current ratio is disclosed. The conductor includes a magnetic liner lining a second surface and sides thereof. The corners of the conductor where the second surface and the sides meet are rounded. The rounded corners have been found to improve the concentration of magnetic flux in the magnetic liner.

REFERENCES:
patent: 5956267 (1999-09-01), Hurst et al.
patent: 6707083 (2004-03-01), Hiner et al.
patent: 7005691 (2006-02-01), Odagawa et al.
patent: 2003/0137053 (2003-07-01), Okayama
patent: 2004/0032010 (2004-02-01), Kools et al.
Durlam, M., et al., “A low power 1Mbit MRAM based on 1T1MT J bit cell integrate with Copper Interconnects”, Jun. 13-5, 2002, VLSI Circuits Dig. of Tech papers, pp. 158-161.
Lenssen, K.-M.H., et al., “Magnetic Random Access Memory (MRAM) and its prospects,” 6 pages.
Reohr, W., et al., “Memories of Tomorrow,” IEEE Circuits & Devices Magazine, Sep. 2002, pp. 17-27.

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