Magnetically enhanced sputtering device having a plurality of ma

Details Magnetically enhanced sputtering device having a plurality of ma Magnetically enhanced sputtering device having a plurality of ma

1980-06-23

1984-07-24

Kaplan, G. L.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204298, C23C 1500

Patent

active

044616880

ABSTRACT:
A magnetron sputtering device wherein a plurality of magnetic field sources are employed to enhance uniformity of cathode sputtering. Each of the magnetic field sources is independently capable of establishing a discharge at the cathode if the other magnetic field sources are removed so that portions of a V-shaped erosion pattern produced by a primary discharge are also eroded to thus effect the more uniform cathode sputtering.
In one embodiment of the invention, a magnetic field dome of a first polarity is disposed over a second magnetic field dome of the opposite polarity, the domes being disposed over the cathode so that a closed plasma loop is established, the loop including a first sputtering path which extends over the cathode and a second non-sputtering return path which is disposed over the sputtering path and between the first and second magnetic field domes.
The above technique for trapping plasma between the first and second magnetic field domes is unique and has applications to areas other than sputtering.

REFERENCES:
patent: 3956093 (1976-05-01), McLeod
patent: 4132613 (1979-01-01), Penfold et al.
patent: 4180450 (1979-12-01), Morrison, Jr.
patent: 4282083 (1981-08-01), Kertesz et al.
J. L. Vossen et al., Thin Film Processes, Academic Press, 1978, pp. 76-79.
D. Hadfield, Permanent Magnets and Magnetism, John Wiley & Sons, New York, 1962, pp. 289-291.

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