Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2006-09-12
2006-09-12
Flynn, Nathan J. (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S003000, C438S070000, C438S238000, C438S241000, C438S258000, C257S295000, C257S421000, C257S422000
Reexamination Certificate
active
07105372
ABSTRACT:
A method of forming an MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.
REFERENCES:
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5757695 (1998-05-01), Shi et al.
patent: 5766743 (1998-06-01), Fujikata et al.
patent: 5841692 (1998-11-01), Gallagher et al.
patent: 5917749 (1999-06-01), Chen et al.
patent: 5959880 (1999-09-01), Shi et al.
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6205052 (2001-03-01), Slaughter et al.
patent: 6226160 (2001-05-01), Gallagher et al.
patent: 6351410 (2002-02-01), Nakao et al.
patent: 6430084 (2002-08-01), Rizzo et al.
patent: 6614630 (2003-09-01), Horng et al.
patent: 6756237 (2004-06-01), Xiao et al.
patent: 6818458 (2004-11-01), Gill
patent: 6946302 (2005-09-01), Deak
patent: 6979586 (2005-12-01), Guo et al.
patent: 2004/0233760 (2004-11-01), Guo et al.
“Orientational Dependence of the Exchange Biasing in Molecular-Beam-Epitaxy-Grown Ni80Fe20/Fe5oMu50 Bilayers (Invited),” by Jungblut et al., pp. 6659-6664, 1994 American Institute of Physics, May 15, 1994, J. Appl. Phys. 75(10).
Horng Cheng
Min Tai
Wang Po Kang
Ackerman Stephen B.
Erdem Fazli
Flynn Nathan J.
Headway Technologies Inc.
Saile Ackerman LLC
LandOfFree
Magnetic tunneling junction film structure with process... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic tunneling junction film structure with process..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic tunneling junction film structure with process... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3564822