Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2011-08-09
2011-08-09
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257SE29323, C365S158000, C365S171000, C365S173000
Reexamination Certificate
active
07994596
ABSTRACT:
An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.
REFERENCES:
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5757695 (1998-05-01), Shi et al.
patent: 5766743 (1998-06-01), Fujikata et al.
patent: 5841692 (1998-11-01), Gallagher et al.
patent: 5917749 (1999-06-01), Chen et al.
patent: 5953248 (1999-09-01), Chen et al.
patent: 5959880 (1999-09-01), Shi et al.
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6205052 (2001-03-01), Slaughter et al.
patent: 6219212 (2001-04-01), Gill et al.
patent: 6226160 (2001-05-01), Gallagher et al.
patent: 6351410 (2002-02-01), Nakao et al.
patent: 6391483 (2002-05-01), Zhu et al.
patent: 6430084 (2002-08-01), Rizzo et al.
patent: 6773515 (2004-08-01), Li et al.
patent: 6778363 (2004-08-01), Meguro et al.
patent: 6879475 (2005-04-01), Kishi et al.
patent: 6885528 (2005-04-01), Hasegawa et al.
patent: 6980468 (2005-12-01), Ounadjela
patent: 7036208 (2006-05-01), Ho et al.
patent: 7178222 (2007-02-01), Hasegawa
patent: 7248445 (2007-07-01), Nishiyama
patent: 2003/0072971 (2003-04-01), Fukutani et al.
patent: 2003-317215 (2003-11-01), None
patent: WO 2004/003924 (2004-01-01), None
Orientational Dependance of the Exchange Biasing in Molecular-Beam Epitaxy—Grown Ni80Fe20/Fe50Mn50Bilayers.
(Invited); by Jungblut et al., pp. 6659-6664, 1994 American Institute of Physics, May 15, 1994, J.Appl. Phys. 75 (10).
Translation of Office Action—JP, Nov. 18, 2010, Headway Technologies, Inc.
Horng Cheng
Min Tai
Wang Po Kang
Ackerman Stephen B.
Bernstein Allison P
Headway Technologies Inc.
Phung Anh
Saile Ackerman LLC
LandOfFree
Magnetic tunneling junction film structure with process... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic tunneling junction film structure with process..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic tunneling junction film structure with process... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2722610