Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device
Reexamination Certificate
2006-07-11
2006-07-11
Quach, Tuan N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Tunneling pn junction device
C267S251000, C438S979000
Reexamination Certificate
active
07075121
ABSTRACT:
A tunneling junction element comprises: a substrate; a lower conductive layer formed on the substrate; a first oxide layer formed on the lower conductive layer and having a non-stoichiometric composition;a second oxide layer formed on the first oxide layer and having a stoichiometric composition; and an upper conductive layer formed on the second oxide layer, wherein the first oxide layer is oxidized during a process of forming the second oxide layer and has an oxygen concentration which is lower than an oxygen concentration of the second oxide layer and lowers with a depth in the first oxide layer, and the first and second oxide layers form a tunneling barrier.
REFERENCES:
patent: 5986858 (1999-11-01), Sato et al.
patent: 6655006 (2003-12-01), Pinarbasi
patent: 6661626 (2003-12-01), Gill
patent: 6669787 (2003-12-01), Gillies et al.
patent: 6839206 (2005-01-01), Saito et al.
patent: 6897532 (2005-05-01), Schwarz et al.
patent: 2000-036628 (2000-02-01), None
patent: 2000-091668 (2000-03-01), None
patent: 2002-190632 (2002-07-01), None
Dickstein Shapiro Morin & Oshinsky LLP.
Quach Tuan N.
Yamaha Corporation
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