Magnetic tunneling junction antifuse device

Details Magnetic tunneling junction antifuse device Magnetic tunneling junction antifuse device

2007-02-13

2007-02-13

Ho, Tu-Tu (Department: 2818)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

C438S467000, C438S600000, C257S530000, C257SE23147, C257S295000, C257S421000

Reexamination Certificate

active

11123916

ABSTRACT:
An MRAM device having a plurality of MRAM cells formed of a fixed magnetic layer, a second soft magnetic layer and a dielectric layer interposed between the fixed magnetic layer and the soft magnetic layer. The MRAM cells are all formed simultaneously and at least some of the MRAM cells are designed to function as antifuse devices whereby the application of a selected electrical potential can short the antifuse device to thereby affect the functionality of the MRAM device.

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patent: 2003/0179601 (2003-09-01), Seyyedy et al.
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