Magnetic tunneling junction and fabrication method thereof

Details Magnetic tunneling junction and fabrication method thereof Magnetic tunneling junction and fabrication method thereof

2005-02-01

2005-02-01

Sheehan, John P (Department: 1742)

Metal working

Method of mechanical manufacture

Electrical device making

C365S158000, C365S171000, C365S173000, C148S121000

Reexamination Certificate

active

06848169

ABSTRACT:
A fabrication method of a magnetic tunnel junction includes the steps of: forming a magnetic tunnel junction constructed having a first magnetic layer, a tunnel barrier formed at an upper surface of the first magnetic layer and a second magnetic layer formed at an upper surface of the tunnel barrier; and thermally treating the junction rapidly for 5 seconds˜10 minutes at a temperature of 200˜600° C. to re-distribute oxygens in the tunnel barrier and make the interface between the tunnel barrier and the magnetic layer to be even. The tunneling magnetoresistance and thermal stability of the magnetic tunnel junction can be improved through the rapid thermal annealing.

REFERENCES:
patent: 6359289 (2002-03-01), Parkin
patent: 6518588 (2003-02-01), Parkin et al.
patent: 20020081753 (2002-06-01), Gates et al.
patent: 20020131215 (2002-09-01), Beach
patent: 20030067802 (2003-04-01), Anthony et al.
patent: 20030184919 (2003-10-01), Lin et al.
K.I. Lee, et al. (2002) “Enhanced Tunneling Magnetoreistance and Thermal Stability of Magnetic Tunnel Junction by Rapid Thermal Anneal”, Journal of Magnetism and Magnetic Materials, pp. 120-122, 2002.

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