Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-10-02
2007-10-02
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S257000, C438S593000, C257S295000
Reexamination Certificate
active
11151470
ABSTRACT:
A magnetic tunnel element that can be used, for example, as part of a read head or a magnetic memory cell, includes a first layer formed from an amorphous material, an amorphous tunnel barrier layer, and an interface layer between the first layer and the tunnel barrier layer. The interface layer is formed from a material that is crystalline when the material is in isolation from both the first layer and the tunnel barrier layer. Alternatively, the thickness of the interface layer is selected so that the interface layer is not crystalline. The first layer is formed from at least one material selected from the group consisting of amorphous ferromagnetic material, amorphous ferromagnetic materials, and amorphous non-magnetic materials. The interface layer is formed from a material selected from the group consisting of a ferromagnetic material and a ferrimagnetic material.
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Papworth Parkin Stuart Stephen
Samant Mahesh Govind
Curtin, L.L.C. Joseph P.
Le Dung A.
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