Stock material or miscellaneous articles – Magnetic recording component or stock – Magnetic head
Reexamination Certificate
2007-11-27
2007-11-27
Bernatz, Kevin M. (Department: 1773)
Stock material or miscellaneous articles
Magnetic recording component or stock
Magnetic head
C428S811500, C428S812000, C428S813000, C360S324200, C427S130000, C427S131000
Reexamination Certificate
active
10904243
ABSTRACT:
Magnetic material, which is not normally bcc-structured under ambient conditions, is induced into becoming bcc as a result of its proximity to a suitable templating material, such as a bcc-structured underlayer that is in contact with the magnetic material. The magnetic material, in combination with a tunnel barrier and other elements, forms a magnetic tunneling device, such as a magnetic tunnel junction that may have a tunneling magnetoresistance of 100% or more. Suitable tunnel barriers include MgO and Mg—ZnO, and the magnetic material may be Co. The templating material may include such elements as V, Cr, Nb, Mo, and W, or the tunnel barrier MgO may itself serve as the templating material.
REFERENCES:
patent: 5390061 (1995-02-01), Nakatani et al.
patent: 5465185 (1995-11-01), Heim et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5729410 (1998-03-01), Fontana, Jr. et al.
patent: 5764567 (1998-06-01), Parkin
patent: 5841692 (1998-11-01), Gallagher et al.
patent: 5862022 (1999-01-01), Noguchi et al.
patent: 5995338 (1999-11-01), Watanabe et al.
patent: 6165607 (2000-12-01), Yamanobe et al.
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6172859 (2001-01-01), Watanabe et al.
patent: 6249407 (2001-06-01), Aoshima et al.
patent: 6338899 (2002-01-01), Fukuzawa et al.
patent: 6365286 (2002-04-01), Inomata et al.
patent: 6392281 (2002-05-01), Tsuge
patent: 6449135 (2002-09-01), Ding et al.
patent: 6518588 (2003-02-01), Parkin et al.
patent: 6603642 (2003-08-01), Araki et al.
patent: 6667493 (2003-12-01), Ooshima
patent: 6674617 (2004-01-01), Gill
patent: 6687099 (2004-02-01), Nakatani et al.
patent: 6791792 (2004-09-01), Takahashi
patent: 6819532 (2004-11-01), Kamijo
patent: 6841395 (2005-01-01), Linn et al.
patent: 6963096 (2005-11-01), Schmidt et al.
patent: 7132175 (2006-11-01), Hasegawa et al.
patent: 7212385 (2007-05-01), Hayakawa
patent: 2001/0043448 (2001-11-01), Iwasaki et al.
patent: 2002/0006020 (2002-01-01), Hasegawa
patent: 2002/0015269 (2002-02-01), Iwasaki et al.
patent: 2002/0034094 (2002-03-01), Saito et al.
patent: 2002/0054462 (2002-05-01), Sun et al.
patent: 2002/0076940 (2002-06-01), Hibino
patent: 2002/0085319 (2002-07-01), Hayakawa
patent: 2002/0191354 (2002-12-01), Yoshikawa et al.
patent: 2003/0128483 (2003-07-01), Kamijo
patent: 2003/0157373 (2003-08-01), Kirino et al.
patent: 2003/0161181 (2003-08-01), Saito et al.
patent: 2003/0169542 (2003-09-01), Gill
patent: 2003/0179071 (2003-09-01), Hiramoto et al.
patent: 2003/0197984 (2003-10-01), Inomata et al.
patent: 2003/0227799 (2003-12-01), Higo et al.
patent: 2004/0023075 (2004-02-01), Saito et al.
patent: 2004/0058196 (2004-03-01), Lambeth
patent: 2004/0144995 (2004-07-01), Nagahama et al.
patent: 2004/0207961 (2004-10-01), Ichimura et al.
patent: 2004/0234815 (2004-11-01), Drewes
patent: 2005/0074634 (2005-04-01), Hasegawa et al.
patent: 2005/0094327 (2005-05-01), Okuno et al.
patent: 2005/0152077 (2005-07-01), Yuasa et al.
patent: 2005/0238924 (2005-10-01), Gill
patent: 2006/0164759 (2006-07-01), Okada et al.
patent: 2007/0154740 (2007-07-01), Yuasa et al.
patent: 02/075344 (2002-09-01), None
patent: 02/099905 (2002-12-01), None
Magnetic Properties of Co-Fe-Ni films (Jen, S., Chiang, H., Chung, C., Kao, M., J. Mag. Mag. Mat., 236, 2001, 312-319).
X-F. Han et al., “Fabrication of high-magnetoresistance tunnel junctions using Co75Fe25 ferromagnetic electrodes”, Applied Physics Letters, vol. 77, No. 2, Jul. 10, 2000, pp. 283-285.
S. Yuasa et al., “High Tunnel Magnetoresistance at Room Temperature in Fully Epitaxial Fe/MgO/Fe Tunnel Junctions due to Coherent Spin-Polarized Tunneling”, Japanese Journal of Applied Physics, vol. 43, No. 4B, 2004, pp. L588-L590.
W. H. Butler et al., “Spin-dependent tunneling conductance of Fe/MgO/Fe sandwiches”, Physical Review B, vol. 63, 2001, pp. 054416-1 through 054416-12.
M. Tsunoda et al., “60% magnetoresistance at room temperature in Co-Fe/Al-O/Co-Fe tunnel junctions oxidized with Kr-O2 plasma”, Applied Physics Letters, vol. 80, No. 17, Apr. 29, 2002, pp. 3135-3137.
J. S. Moodera et al., “Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions”, Physical Review Letters, vol. 74, No. 16, Apr. 17, 1995, pp. 3273-3276.
S. S. P. Parkin et al., “Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)”, Journal of Appl. Physics, vol. 85, No. 8, Apr. 15, 1999, pp. 5828-5833.
T. Miyazaki et al., “Giant magnetic tunneling effect in Fe/Al2O3/Fe junction”, Journal of Magnetism and Magnetic Materials, vol. 139, 1995, pp. L231-L234.
M. Julliere, “Tunneling Between Ferromagnetic Films”, Physics Letters, vol. 54A, No. 3, Sep. 8, 1975, pp. 225-226.
S. S. P. Parkin et al., “Oscillations in Exchange Coupling and Magnetoresistance in Metallic Superlattice Structures: Co/Ru, Co/Cr, and Fe/Cr”, Physical Review Letters, vol. 64, No. 19, May 7, 1990, pp. 2304-2307.
S. S. P. Parkin, “Systematic Variation of the Strength and Oscillation Period of Indirect Magnetic Exchange Coupling through the 3d, 4d, and 5d Transition Metals”, Physical Review Letters, vol. 67, No. 25, Dec. 16, 1991, pp. 3598-3601.
D. C. Worledge et al., “Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling”, Applied Physics Letters, vol. 83, No. 1, Jul. 7, 2003, pp. 84-86.
D. Wang et al., “70% TMR at Room Temperature for SDT Sandwich Junctions With CoFeB as Free and Reference Layers”, IEEE Trans. on Magnetics, vol. 40, No. 4, Jul. 2004, pp. 2269-2271.
C. M. Boubeta et al., “Epitaxial Fe/MgO heterostructures on GaAs (001)”, Journal of Crystal Growth, vol. 226, 2001, pp. 223-230.
R. Meservey et al., “Spin-Polarized Electron Tunneling”, Physics Reports (Review Section of Physics Letters) vol. 238, No. 4 (1994) pp. 173-243.
S. Yuasa et al., “High Tunnel Magnetoresistance at Room Temperature in Fully Epitaxial Fe/MgO/Fe Tunnel Junctions due to Coherent Spin-Polarized Tunneling”, Japanese Journal of Applied Physics, Apr. 2, 2004, p. L588, vol. 43, No. 4B, Japan.
Bernatz Kevin M.
Johnson Daniel E.
LandOfFree
Magnetic tunnel junctions with high tunneling... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic tunnel junctions with high tunneling..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic tunnel junctions with high tunneling... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3887540