Magnetic tunnel junctions including crystalline and...

Details Magnetic tunnel junctions including crystalline and... Magnetic tunnel junctions including crystalline and...

2008-06-25

2009-08-04

Renner, Craig A (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07570463

ABSTRACT:
Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure. The bilayer includes a crystalline material, such as MgO or Mg—ZnO, and Al2O3, which may be amorphous. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., greater than 100% at room temperature.

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