Magnetic tunnel junction transistor

Details Magnetic tunnel junction transistor Magnetic tunnel junction transistor

2011-07-19

2011-07-19

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S259000, C257S295000, C257S421000, C257SE29059, C257SE29061, C257SE29323, C365S171000

Reexamination Certificate

active

07982249

ABSTRACT:
A magnetic tunnel junction transistor. In a particular embodiment, the magnetic tunnel junction transistor includes a tunnel barrier having a high resistance when in a non-ferromagnetic, state and a low resistance when in a ferromagnetic state. The tunnel barrier is switchable between the non-ferromagnetic and the ferromagnetic states.

REFERENCES:
patent: 6839273 (2005-01-01), Odagawa et al.
patent: 2004/0165428 (2004-08-01), Odagawa et al.
patent: 2010/0213558 (2010-08-01), Bae et al.

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