Magnetic tunnel junction structure with amorphous NiFeSiB...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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C360S324200

Reexamination Certificate

active

11240162

ABSTRACT:
A magnetic tunnel junction (MTJ) structure for a magnetic random access memory (MRAM) is provided. Specifically, an MTJ structure with an amorphous CoFeSiB or NiFeSiB free layer is provided. The free layer is a CoFeSiB single layer, a NiFeSiB single layer, a CoFeSiB/Ru/CoFeSiB SAF layer, or a NiFeSiB/Ru/NiFeSiB SAF layer.

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