Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2007-12-04
2007-12-04
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C360S324200
Reexamination Certificate
active
11240162
ABSTRACT:
A magnetic tunnel junction (MTJ) structure for a magnetic random access memory (MRAM) is provided. Specifically, an MTJ structure with an amorphous CoFeSiB or NiFeSiB free layer is provided. The free layer is a CoFeSiB single layer, a NiFeSiB single layer, a CoFeSiB/Ru/CoFeSiB SAF layer, or a NiFeSiB/Ru/NiFeSiB SAF layer.
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Chun Byong-Sun
Hwang Jae-Youn
Kim Young-Keun
Rhee Jang-Roh
Grossman Tucker Perreault & Pfleger PLLC
Korea University Foundation
Parker Kenneth
Valentine Jami M.
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