Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-11-28
2006-11-28
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S002000
Reexamination Certificate
active
07141438
ABSTRACT:
There are provided a magnetic tunnel junction structure and a method of fabricating the same. The magnetic tunnel junction structure includes a lower electrode, a lower magnetic layer pattern and a tunnel layer pattern, which are sequentially formed on the lower electrode. The magnetic tunnel junction structure further includes an upper magnetic layer pattern, a buffer layer pattern, and an upper electrode, which are sequentially formed on a portion of the tunnel layer pattern. The sidewall of the upper magnetic layer pattern is surrounded by an oxidized upper magnetic layer, and the sidewall of the buffer layer pattern is surrounded by an oxidized buffer layer. The depletion of the upper magnetic layer pattern and the lower magnetic layer pattern in the magnetic tunnel junction region can be prevented by the oxidized buffer layer.
REFERENCES:
patent: 6165803 (2000-12-01), Chen et al.
patent: 6485989 (2002-11-01), Signorini
patent: 6939722 (2005-09-01), Okazawa et al.
Bae Jun-Soo
Baek In-Gyu
Ha Young-Ki
Kim Hyun-Jo
Lee Jang-Eun
Lebentritt Michael
Marger & Johnson & McCollom, P.C.
Ullah Elias M.
LandOfFree
Magnetic tunnel junction structure having an oxidized buffer... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic tunnel junction structure having an oxidized buffer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic tunnel junction structure having an oxidized buffer... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3682732