Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2006-04-25
2006-04-25
Renner, Craig A. (Department: 2652)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
C360S324120
Reexamination Certificate
active
07035063
ABSTRACT:
A magnetic tunnel junction (MTJ) sensor in which the free layer longitudinal biasing elements are coupled, without insulation, to the free layer outside of the MTJ stack to provide reliable non-shunting MTJ free layer stabilization without extremely thin dielectric layers. In one embodiment, hard magnetic (HM) layers are disposed in contact with the free layer outside of and separated from the MTJ stack active region by a thick dielectric layer. In another embodiment, antiferromagnetic (AFM) bias layers are disposed in contact with the free layer outside of and separated from the MTJ stack active region by a thick dielectric layer. In other embodiments, nonconductive HM layers are disposed either in contact with the free layer outside of the MTJ stack active region and/or in abutting contact with the MTJ stack active region.
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Hitachi Global Storage Technologies - Netherlands B.V.
Renner Craig A.
Zilka-Kotab, PC
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