Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-10-19
2008-11-04
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S733000, C257SE21170, C257SE21208, C257SE21209, C257SE21218, C257SE21231, C257SE21646
Reexamination Certificate
active
07445943
ABSTRACT:
Methods and apparatus are provided for magnetoresistive memories employing magnetic tunnel junction (MTJ). The apparatus comprises a MTJ (61, 231), first (60, 220) and second (66, 236) electrodes coupled, respectively, to first (62, 232) and second (64, 234) magnetic layers of the MTJ (61, 231), first (54, 204) and second (92, 260) write conductors magnetically coupled to the MTJ (61, 231) and spaced apart from the first (60, 220) and second (66, 236) electrodes, and at least one etch-stop layer (82, 216) located between the first write conductor (54, 204) and the first electrode (60, 220), having an etch rate in a reagent for etching the MTJ (61, 231) and/or the first electrode (60, 220) that is at most25% of the etch rate of the MTJ (61, 231) and/or first conductor (60, 220) to the same reagent, so as to allow portions of the MTJ (61, 231) and first electrode (60, 220) to be removed without affecting the underlying first write conductor (54, 204). In a further embodiment, a second etch-stop layer (90, 250) is located between the second electrode (66, 236) and the second write conductor (92, 260). Improved yield and performance are obtained.
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International Search Report and Written Opinion.
Butcher Brian R.
Grynkewich Gregory W.
Pietambaram Srinivas V.
Rizzo Nicholas D.
Smith Kenneth H.
Everspin Technologies, Inc.
Ingrassia Fisher & Lorenz P.C.
Nhu David
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