Magnetic tunnel junction magnetoresistive read head with longitu

Dynamic magnetic information storage or retrieval – Head – Hall effect

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

G11B 539

Patent

active

06005753&

ABSTRACT:
A magnetic tunnel junction magnetoresistive read head has one fixed ferromagnetic layer and one generally rectangularly shaped sensing ferromagnetic layer on opposite sides of the tunnel barrier layer, and a biasing ferromagnetic layer located around the side edges and back edges of the sensing ferromagnetic layer. An electrically insulating layer separates the biasing layer from the edges of the sensing layer. The biasing layer is a continuous boundary biasing layer that has side regions and a back region to surround the three edges of the sensing layer. When the biasing layer is a single layer with contiguous side and back regions its magnetic moment can be selected to make an angle with the long edges of the sensing layer. In this manner the biasing layer provides both a transverse bias field to compensate for transverse ferromagnetic coupling and magnetostatic coupling fields acting on the sensing layer to thus provide for a linear response of the head and a longitudinal bias field to stabilize the head. The biasing layer may also be formed with discrete side regions and a back region. The discrete side regions may have a magnetic moment oriented in a different direction from the moment of the back region in order to provide the correct combination of transverse and longitudinal bias fields.

REFERENCES:
patent: 3623038 (1971-11-01), Franklin et al.
patent: 4277808 (1981-07-01), Nagaki
patent: 4899240 (1990-02-01), McClure
patent: 4972284 (1990-11-01), Smith et al.
patent: 4987508 (1991-01-01), Smith
patent: 5018037 (1991-05-01), Krounbi et al.
patent: 5021909 (1991-06-01), Shiiba
patent: 5390061 (1995-02-01), Nakatani et al.
patent: 5416353 (1995-05-01), Kamiguchi et al.
patent: 5428491 (1995-06-01), Smith
patent: 5432734 (1995-07-01), Kawano et al.
patent: 5465185 (1995-11-01), Heim et al.
patent: 5528440 (1996-06-01), Fontana et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5729410 (1998-03-01), Fontana et al.
patent: 5764567 (1998-06-01), Parkin
patent: 5801984 (1998-09-01), Parkin
M. Julliere, "Tunneling Between Ferromagnetic Films", Physics Letters, vol. 54A, No. 3, Sep. 8, 1975, pp. 225-226.
K. Matsuyama et al., "Fabrication of Microstructured Magnetic Tunneling Valve Junction", IEEE Transactions on Magnetics, vol. 31, NO. 6, Nov. 1995, pp. 3176-3178.
J. S. Moodera et al., "Ferromagnetic-insulator-ferromagnetic Tunneling: Spin-dependent Tunneling and Large Magnetoresistance in Trilayer Junctions", Symposium on Spin Tunneling and Injection Phenomena, Journal of Applied Physics, vol. 79, No. 8, Apr. 15, 1996, pp. 4724-4729.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetic tunnel junction magnetoresistive read head with longitu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic tunnel junction magnetoresistive read head with longitu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic tunnel junction magnetoresistive read head with longitu will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-511304

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.