Magnetic tunnel junction device and its method of fabrication

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

10200512

ABSTRACT:
The present invention provides a magnetic tunnel junction memory element comprising two pinned ferromagnetic layers having magnetic orientations pointing in opposite directions and a sense layer arranged between the two pinned ferromagnetic layers and separated from each by a nonmagnetic tunnel barrier layer. The invention also provides methods of fabricating magnetic tunnel junction memory elements as well as magnetoresistive memory devices and processor systems comprising such memory elements.

REFERENCES:
patent: 5408377 (1995-04-01), Gurney et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5764567 (1998-06-01), Parkin
patent: 5768069 (1998-06-01), Mauri
patent: 5768181 (1998-06-01), Zhu et al.
patent: 5841692 (1998-11-01), Gallagher et al.
patent: 5966012 (1999-10-01), Parkin
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6178074 (2001-01-01), Gill
patent: 6185080 (2001-02-01), Gill
patent: 6211559 (2001-04-01), Zhu et al.
patent: 6259586 (2001-07-01), Gill
patent: 6275363 (2001-08-01), Gill
patent: 6341053 (2002-01-01), Nakada et al.
patent: 6449134 (2002-09-01), Beach et al.
patent: 6611405 (2003-08-01), Inomata et al.
patent: 6621664 (2003-09-01), Trindade et al.
patent: 6750068 (2004-06-01), Chen
patent: 6765768 (2004-07-01), Saito
patent: 6781798 (2004-08-01), Gill
patent: 6822838 (2004-11-01), Lin et al.
patent: 6891703 (2005-05-01), Hasegawa
patent: 6982854 (2006-01-01), Kawawake et al.
F. Montaigne, et al., Enhanced Tunnel Magnetoresistance at High Bias Voltage in Double-Barrier Planar Junctions,Appl. Phys. Lett., vol. 73, No. 19, Nov. 9, 1998, pp. 2829-2831.
K. Inomata, et al., Double Tunnel Junctions for Magnetic Random Access Memory Devices,J. Appl. Phys., vol. 87, No. 9, May 1, 2000, pp. 6064-6066.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetic tunnel junction device and its method of fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic tunnel junction device and its method of fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic tunnel junction device and its method of fabrication will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3775734

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.