Magnetic tunnel junction cap structure and method for...

Details Magnetic tunnel junction cap structure and method for... Magnetic tunnel junction cap structure and method for...

2006-09-26

2006-09-26

Sarkar, Asok Kumar (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257SE29323, C438S003000

Reexamination Certificate

active

07112861

ABSTRACT:
A a magnetic random access memory (MRAM) device includes a cap layer formed over a magnetic tunnel junction (MTJ) stack layer, an etch stop layer formed over the first cap layer, and a hardmask layer formed over the etch stop layer. The etch stop layer is selected from a material such that an etch chemistry used for removing the hardmask layer has selectivity against etching the etch stop layer material.

REFERENCES:
patent: 6211090 (2001-04-01), Durlam et al.
patent: 2003/0076703 (2003-04-01), Kim et al.
patent: 2003/0181056 (2003-09-01), Kumar et al.
patent: 2003/0199104 (2003-10-01), Leuschner et al.
patent: 2003/0206434 (2003-11-01), Leuschner
patent: 2003/0207486 (2003-11-01), Deak
patent: 2005/0102720 (2005-05-01), Lee
patent: 2005/0191764 (2005-09-01), Yates et al.

Affiliated with

Also associated with

Rating

Magnetic tunnel junction cap structure and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic tunnel junction cap structure and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic tunnel junction cap structure and method for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3552394