Magnetic transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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Details

C257SE29167

Reexamination Certificate

active

07492021

ABSTRACT:
A magnetic transistor includes a magnetic section, a thin semiconductor layer, a first metal terminal, a second metal terminal, and a third metal terminal. The thin semiconductor layer is disposed on the magnetic section. The first metal terminal is disposed on one end of the magnetic section, acting as a gate of the magnetic transistor and capable of providing a conductive channel in the thin semiconductor layer. The second metal terminal and the third metal terminal are disposed respectively on one end and the other end of the thin semiconductor layer, capable of creating a conductive region. While the magnetic transistor is turned on, a current path is formed between the second metal terminal and the third metal terminal via the thin semiconductor layer.

REFERENCES:
patent: 4806998 (1989-02-01), Vinter et al.
patent: 5962905 (1999-10-01), Kamiguchi et al.
patent: 6218718 (2001-04-01), Gregg et al.
patent: 6297987 (2001-10-01), Johnson et al.
patent: 6753562 (2004-06-01), Hsu et al.
patent: 2006/0049474 (2006-03-01), Nguyen Van Dau
patent: 2007/0109853 (2007-05-01), Ho

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