Magnetic storage element with storage layer magnetization...

Details Magnetic storage element with storage layer magnetization... Magnetic storage element with storage layer magnetization...

2007-03-16

2010-12-28

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C365S171000, C365S173000

Reexamination Certificate

active

07859069

ABSTRACT:
The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

REFERENCES:
patent: 5982660 (1999-11-01), Bhattacharyya et al.
patent: 6130814 (2000-10-01), Sun
patent: 6532164 (2003-03-01), Redon et al.
patent: 6888742 (2005-05-01), Nguyen et al.
patent: 6980469 (2005-12-01), Kent et al.
patent: 6982909 (2006-01-01), Perner et al.
patent: 7005691 (2006-02-01), Odagawa et al.
patent: 7006375 (2006-02-01), Covington
patent: 2001/0026471 (2001-10-01), Michijima et al.
patent: 2002/0122338 (2002-09-01), Park et al.
patent: 2004/0027853 (2004-02-01), Huai et al.
patent: 2004/0246776 (2004-12-01), Covington
patent: 2007/0063237 (2007-03-01), Huai et al.
patent: 2007/0086120 (2007-04-01), Shimazawa et al.

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