Magnetic storage device comprising memory cells including...

Details Magnetic storage device comprising memory cells including... Magnetic storage device comprising memory cells including...

2006-08-01

2006-08-01

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S295000, C438S003000, C438S048000

Reexamination Certificate

active

07084469

ABSTRACT:
A magnetic storage device comprises an interlayer insulation film, a metal oxide film, a conductive film, and a magneto-resistive element. The interlayer insulation film is formed on a semiconductor substrate. The metal oxide film is formed on the interlayer insulation film. The conductive film is formed on the metal oxide film and contains metal elements. The magneto-resistive element is formed on the conductive film.

REFERENCES:
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patent: 6906374 (2005-06-01), Tanaka
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patent: 2004/0135189 (2004-07-01), Kiyotoshi
patent: 2002-368197 (2002-12-01), None
Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, ISSCC2000 Technical Digest, 2000, pp. 128-129.

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