Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2011-03-15
2011-03-15
Garber, Charles (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S238000, C438S396000, C438S672000, C257SE21585, C257SE21665
Reexamination Certificate
active
07906347
ABSTRACT:
In an MRAM, a curved region (206) is formed in a bit line (202), and this curved region (206) is in bent shape, with a TMR element (203) serving as a center, in this case, in rough U shape (in the illustrated example, in roughly inverted U shape). The bit line (202) in which the curved region (206) is formed includes the TMR element (203) in a space formed by the curved region (206). Thanks to such relatively simple construction, this construction realizes a highly reliable MRAM which ensures that power is substantially saved during data writing into a memory cell while meeting requirements for further miniaturization of the device.
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Ahmadi Mohsen
Fujitsu Limited
Garber Charles
Westerman Hattori Daniels & Adrian LLP
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