Magnetic storage apparatus having dummy magnetoresistive...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C257S066000, C257S324000, C257S344000, C257S347000, C257S408000

Reexamination Certificate

active

06916677

ABSTRACT:
A magnetic memory device includes a memory cell portion, a peripheral circuit portion positioned in the vicinity of the memory cell portion, a plurality of first magnetoresistive effect elements which are arranged in the memory cell portion and function as memory elements, and a plurality of second magnetoresistive effect elements which are arranged in at least a part of the peripheral circuit portion and function as dummies, wherein a sum total of occupying areas of the second magnetoresistive effect elements is 5% to 80% of the peripheral circuit portion.

REFERENCES:
patent: 5841692 (1998-11-01), Gallagher et al.
patent: 6593624 (2003-07-01), Walker
R. Scheuerlein, et al., IEEE International Solid-State Circuits Conference, pp. 128-129, “TA 7.2 A 10NS Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, 2000.
M. Sato, et al. IEEE Transactions on Magnetics, vol. 33, No. 5, pp. 3553-3555, “Spin-Valve-Like Properties and Annealing Effect in Ferromagnetic Tunnel Junctions”, Sep. 1997.
M. Sato, et al., Jpn. J. Appl. Phys., vol. 36, part 2, No. 2B, pp. L200-L201, “Spin-Valve-Like Properties of Ferromagnetic Tunnel Junctions”, Feb. 15, 1997.
K. Inomata, et al., Jpn. J. Appl. Phys., vol. 36, part 2, No. 10B, pp. L1380-L1383, “Spin-Dependent Tunneling Between a Soft Ferromagnetic Layer and Hard Magnetic Nanosize Particles”, Oct. 15, 1997.

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