Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-07-12
2005-07-12
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257S066000, C257S324000, C257S344000, C257S347000, C257S408000
Reexamination Certificate
active
06916677
ABSTRACT:
A magnetic memory device includes a memory cell portion, a peripheral circuit portion positioned in the vicinity of the memory cell portion, a plurality of first magnetoresistive effect elements which are arranged in the memory cell portion and function as memory elements, and a plurality of second magnetoresistive effect elements which are arranged in at least a part of the peripheral circuit portion and function as dummies, wherein a sum total of occupying areas of the second magnetoresistive effect elements is 5% to 80% of the peripheral circuit portion.
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Amano Minoru
Nakajima Kentaro
Kabushiki Kaisha Toshiba
Nelms David
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tran Mai-Huong
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