Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2009-04-17
2011-10-11
Valentine, Jami M (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S422000, C257S423000, C257S424000, C257SE29323, C438S003000, C365S157000, C365S158000, C360S324200
Reexamination Certificate
active
08035177
ABSTRACT:
A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.
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Gao Zheng
Lou Xiaohua
Tian Wei
Zheng Yuankai
Zhu Wenzhong
Campbell Nelson Whipps LLC
Seagate Technology LLC
Valentine Jami M
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