Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2011-08-16
2011-08-16
Valentine, Jami M (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S414000, C257SE29323, C438S003000, C360S324200, C365S157000, C365S171000
Reexamination Certificate
active
07999338
ABSTRACT:
A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.
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Gao Zheng
Jung Wonjoon
Xi Haiwen
Zheng Yuankai
Zhu Wenzhong
Campbell Nelson Whipps LLC
Seagate Technology LLC
Valentine Jami M
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