Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2005-02-08
2008-12-02
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257S422000, C257S433000, C257SE21114, C257SE21665, C053S206000, C053S371200
Reexamination Certificate
active
07459769
ABSTRACT:
It is an object of the invention to relax magnetic saturation and realize a high-performance magnetic shield effect that is suitable for magnetic devices such as an MRAM. A magnetic shield member of the invention is suitable for a magnetic memory device in which a magnetic random access memory (MRAM) consisting of a TMR element formed by stacking a magnetization fixed layer with a direction of magnetization fixed and a magnetic layer, in which a direction of magnetization can be changed, via a tunnel barrier layer is sealed by a sealing material such as resin. A planar shape or a sectional shape of magnetic shield plates provided on the sealing material in order to magnetically shield the MRAM is a shape in which a side substantially perpendicular to a direction of an outer magnetic field and a side substantially parallel to the direction of an outer magnetic field are not orthogonal to each other, in particular, circular, polygonal, or the like, whereby it is possible to relax magnetic saturation of the magnetic shield plate and keep the magnetic shield effect.
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European Search Report dated Feb. 2, 2007.
Hirata Tatsushiro
Ito Yoshinori
Kato Yoshihiro
Kobayashi Kaoru
Okayama Katsumi
Nguyen Dao H
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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