Magnetic sensor having vertical hall device and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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C257SE43003, C257SE27005

Reexamination Certificate

active

11082023

ABSTRACT:
A vertical Hall device includes: a substrate; a semiconductor region having a first conductive type and disposed in the substrate; and a magnetic field detection portion disposed in the semiconductor region. The magnetic field detection portion is capable of detecting a magnetic field parallel to a surface of the substrate in a case where a current flows through the magnetic field detection portion in a vertical direction of the substrate. The semiconductor region is a diffusion layer including a conductive impurity doped and diffused therein. The semiconductor region is made of diffusion layer so that the device has high design degree of freedom.

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Maenaka et al. “Characteristics of Vertical Hall Cells and Improvement of Their Sensitivity.”T.IEE.vol. 117-E, No. 7 (1997):364-371.

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