Magnetic sensor based on efficient spin injection into...

Details Magnetic sensor based on efficient spin injection into... Magnetic sensor based on efficient spin injection into...

2006-08-22

2006-08-22

Dickey, Thomas L. (Department: 2826)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S421000, C257S075000, C365S158000, C365S171000, C365S175000

Reexamination Certificate

active

07094610

ABSTRACT:
A magnetic sensor using efficient injection of spin polarized electrons at room temperature can be fabricated by forming a semiconductor layer sandwiched between ferromagnets and forming δ-doped layers between the semiconductor layer and the ferromagnets. A sensing method applies a magnetic field to be measured to the semiconductor layer and observes the conductivity of the sensor. The sensing techniques can achieve high magneto-sensitivity and very high operating speed, which in turn provides ultra fast and sensitive magnetic sensors.

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patent: 6285581 (2001-09-01), Tehrani et al.
Albrecht et al. cond-mat/0110059, (Feb. 7, 2002) (a publication of ArXiv.org available at http://arXiv.org/PS—cache/cond-mat/pdf/0202/0202131.pdf.arXiv.org is owened, operated and funded by Cornell University).
Albrecht, J.D. et al, “Electron Spin Injection at a Schottky Contact” cond-mat/0110059, (a publication of ArXiv.org, available at http://arHiv.org/PS—cache/cond-mat/pdf/0202/0202131.pdf.arHiv.org is owned, operated and funded by Cornell University) (Feb. 7, 2002).
Zhu, H.J. et al., “Room Temperature Spin Injection from Fe into GaAs” Phys. Rev. Lett. vol. 87, No. 1, pp. 016601.1 to 016601-4 (Jul. 2, 2001).

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