Magnetic sensing element comprising antiferromagnetic layer...

Details Magnetic sensing element comprising antiferromagnetic layer... Magnetic sensing element comprising antiferromagnetic layer...

2006-02-07

2006-02-07

Evans, Jefferson (Department: 2652)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

06995961

ABSTRACT:
Changes of the direction of magnetization at the central region of the free magnetic layer are facilitated by using a layer of a magnetic material having a small exchange stiffness constant such as a NiaFeblayer (a and b are represented in at %, and satisfy the relation of a>80 and a+b=100) and NiFeX layer (X is at least one element selected from Mn, Cu, Zn, Ti, Al, Ge, Si, Cr, V, Sn, Ir, Ru, Nb, Sb, W, Mo, Os and Ta) for the magnetic material layer of the free magnetic layer.

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