Magnetic semiconductor memory device

Details Magnetic semiconductor memory device Magnetic semiconductor memory device

2006-02-21

2006-02-21

Nelms, David (Department: 2818)

Static information storage and retrieval

Read only systems

Magnetic

C257S295000

Reexamination Certificate

active

07002831

ABSTRACT:
A memory cell in a so-called MRAM by utilizing a tunnel magnetic resistance in the prior art has raised problems that a magnetic field to be applied to a TMR element is essentially weak since a word line for write is disposed apart from the TMR element, that a large current is required at the time of a writing operation, and that electric power consumption is large. In order to solve the above-described problems experienced in the prior art, the present invention provides an MRAM memory cell structure and its fabricating method in which a word line for write is disposed near a TMR element and surrounds it in three directions.

REFERENCES:
patent: 6560135 (2003-05-01), Matsuoka et al.
patent: 6771535 (2004-08-01), Sakata et al.
patent: 6876523 (2005-04-01), Takahashi et al.
patent: 2002/0093845 (2002-07-01), Matsuoka et al.
patent: 2002-208682 (2002-07-01), None
Durlam et al., “A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with Copper Interconnects,” 2002 Symposium on VLSI Circuits Digest of Technical Papers, pp. 160-163.

Affiliated with

Also associated with

Rating

Magnetic semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3626388