Magnetic semiconductor memory and the reading method using...

Details Magnetic semiconductor memory and the reading method using... Magnetic semiconductor memory and the reading method using...

2005-06-28

2005-06-28

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Information masking

C365S121000, C365S122000, C365S128000, C365S171000, C365S174000, C365S217000

Reexamination Certificate

active

06912148

ABSTRACT:
A system for writing data to and reading data from a magnetic semiconductor memory utilizing a spin polarized electron beam. The magnetic semiconductor memory comprises a plurality of storage locations, each storage location includes a magnetic material and a layer of semiconductor material capable of emitting photons. The method of reading data from the magnetic semiconductor memory comprising steps of directing a spin-polarized electron beam at the magnetic semiconductor memory, and detecting the light emission state of the semiconductor layer from the magnetic semiconductor memory.

REFERENCES:
patent: 3986194 (1976-10-01), Masumoto et al.
patent: 5229621 (1993-07-01), Komuro et al.
patent: 5546337 (1996-08-01), Hurt et al.
patent: 5604706 (1997-02-01), Hurt et al.

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