Magnetic resistance effect element and method for manufacture th

Details Magnetic resistance effect element and method for manufacture th Magnetic resistance effect element and method for manufacture th

1997-08-12

1999-08-03

Kiliman, Leszek

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Web or sheet containing structurally defined element or...

Physical dimension specified

428336, 428692, 428694R, 428694TR, 428694T, 428694TS, 428694TM, 428900, 427128, 427129, 427130, 427131, 360113, 324252, G11B 566

Patent

active

059323434

ABSTRACT:
A magnetoresistive effect element has an NiO layer, an intermediate layer, a first ferromagnetic layer, a first MR enhancement layer, a non-magnetic layer, a second MR enhancement layer, a second ferromagnetic layer, and a protective layer, laminated in sequence onto an underlayer, the intermediate layer being made of a mixture of nickel oxide and a ferrous oxide materials.

REFERENCES:
patent: 5302434 (1994-04-01), Doerner
patent: 5378548 (1995-01-01), Torii
patent: 5436047 (1995-07-01), Howard
patent: 5549978 (1996-08-01), Iwasaki
David A. Thompson et al., "Thin Film Magnetoresistors in Memory, Storage, and Related Applications", IEEE Transactions on Magnetics, vol. MAG-11, No. 4, Jul. 1975, pp. 1039-1049.

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