Magnetic recording element and magnetic memory

Details Magnetic recording element and magnetic memory Magnetic recording element and magnetic memory

2007-03-20

2008-10-07

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257SE27006, C257S295000, C257S288000, C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

07432574

ABSTRACT:
A magnetic recording element according to an example of the present invention includes a magnetic free layer whose magnetization is variable in accordance with a current direction passing through a film and whose direction of easy axis of magnetization is a direction perpendicular to a film plane, a magnetic pinned layer whose magnetization is fixed to a direction perpendicular to the film plane, and a non-magnetic barrier layer between the magnetic free layer and the magnetic pinned layer. In the magnetic free layer, a relation between a saturated magnetization Ms (emu/cc) and an anisotropy field Han (Oe) satisfies Han>12.57 Ms, and Han<1.2 E7Ms−1+12.57 Ms.

REFERENCES:
patent: 6713195 (2004-03-01), Wang et al.
patent: 6956766 (2005-10-01), Nakamura et al.
patent: 7126848 (2006-10-01), Nakamura et al.
patent: 7126849 (2006-10-01), Nakamura et al.
patent: 7313013 (2007-12-01), Sun et al.
patent: 7372116 (2008-05-01), Fullerton et al.
patent: 2005/0104101 (2005-05-01), Sun et al.
patent: 2005/0185455 (2005-08-01), Huai
patent: 2006/0120126 (2006-06-01), Nakamura et al.
patent: 2007/0086121 (2007-04-01), Nagase et al.
patent: 2004-193595 (2004-07-01), None
patent: 2005-093488 (2005-04-01), None
F.J. Albert et al.: “Spin-polarized current switching of a Co thin film nanomagnet,”American Institute of Physics, Applied Physics Letters, vol. 77, No. 23, pp. 3809-3811, Dec. 4, 2000.

Affiliated with

Also associated with

Rating

Magnetic recording element and magnetic memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic recording element and magnetic memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic recording element and magnetic memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4000334