Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2008-05-05
2009-08-11
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S785000
Reexamination Certificate
active
07572646
ABSTRACT:
A toggle MTJ is disclosed that has a SAF free layer with two or more magnetic sub-layers having equal magnetic moments but different anisotropies which is achieved by selecting Ni˜0.8Fe˜0.2for one sub-layer and CoFeB or the like with a uni-axial anisotropy of 10 to 30 Oe for the higher anisotropy sub-layer. When a field is applied at <10° angle from the easy axis, magnetic vectors for the two sub-layers rotate to form different angles from the easy axis. A method is also described for selectively writing to bits along a word line that is orthogonal to bit line segments and avoids the need to “read first”. A bipolar word line pulse with two opposite pulses separated by a no pulse interval is applied in the absence of a bit line pulse to write a “0”. A bit line pulse opposite the second word line pulse writes a “1”.
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“A 0.18um 4Mb Toggling MRAM,” by M. Durlam et al., IEDM Technical Digest 2003, Session 34, paper #6, 3 pages.
“A Low Power 1Mbit MRAM based on 1T1MTJ bit Cell Integrated with Copper Interconnects,” by M. Durlam et al., VLSI Conference 2002, Motorola, pp. 1-22.
Ackerman Stephen B.
MagIC Technologies, Inc.
Pham Long
Saile Ackerman LLC
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