Magnetic random access memory with lower switching field

Details Magnetic random access memory with lower switching field Magnetic random access memory with lower switching field

2007-04-24

2007-04-24

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S108000, C257S414000, C257S422000, C257S423000, C257S424000, C257S425000, C257S426000, C257S427000, C257S659000

Reexamination Certificate

active

11159137

ABSTRACT:
A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.

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