Magnetic random access memory using memory cells with...

Details Magnetic random access memory using memory cells with... Magnetic random access memory using memory cells with...

2005-12-13

2005-12-13

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

C365S225500, C365S158000, C365S173000, C365S171000, C365S051000, C365S066000

Reexamination Certificate

active

06975555

ABSTRACT:
A magnetic random access memory circuit comprises a plurality of magnetic memory cells, each of the memory cells including a magnetic storage element having an easy axis and a hard axis associated therewith, and a plurality of column lines and row lines for selectively accessing one or more of the memory cells, each of the memory cells being proximate to an intersection of one of the column lines and one of the row lines. Each of the magnetic memory cells is arranged such that the easy axis is substantially parallel to a direction of flow of a sense current and the hard axis is substantially parallel to a direction of flow of a write current.

REFERENCES:
patent: 5343422 (1994-08-01), Kung et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5930164 (1999-07-01), Zhu
patent: 6005800 (1999-12-01), Koch et al.
W. Reohr et al., “Memories of Tomorrow,” IEEE Circuits & Devices Magazine, vol. 18, No. 5, pp. 17-27, Sep. 2002.

Affiliated with

Also associated with

Rating

Magnetic random access memory using memory cells with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic random access memory using memory cells with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory using memory cells with... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3481231