Magnetic random access memory having transistor of vertical...

Details Magnetic random access memory having transistor of vertical... Magnetic random access memory having transistor of vertical...

2005-02-15

2005-02-15

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S268000

Reexamination Certificate

active

06855564

ABSTRACT:
A magnetic random access memory (MRAM) having a vertical structure transistor has the characteristics of faster access time than SRAM, high density as with DRAM, and non-volatility like a flash memory device. The MRAM has a vertical structure transistor, a first word line including the transistor, a contact line connected to the transistor, a magnetic tunnel junction (MTJ) cell deposited on the contact line, a bit line deposited on the MTJ cell, and a second word line deposited on the bit line at the position of MTJ cell. With the disclosed structure, it is possible to improve the integration density of a semiconductor device, to increase the short channel effect, and to improve the control rate of the resistance, while using a simplified manufacturing process.

REFERENCES:
patent: 6379978 (2002-04-01), Goebel et al.
patent: 6473328 (2002-10-01), Mercaldi
patent: 6473336 (2002-10-01), Nakajima et al.

Affiliated with

Also associated with

Rating

Magnetic random access memory having transistor of vertical... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic random access memory having transistor of vertical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory having transistor of vertical... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3508241