Magnetic random access memory designs with patterned and...

Details Magnetic random access memory designs with patterned and... Magnetic random access memory designs with patterned and...

2005-08-16

2005-08-16

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S595000, C438S737000

Reexamination Certificate

active

06929957

ABSTRACT:
A magnetic tunneling junction (MTJ) memory cell and an MRAM array of such cells, is shielded by magnetic shields of ferromagnetic material or by ferromagnetic shields that are stabilized by patterned layers of antiferromagnetic material or permanent magnetic material. The ferromagnetic portions of the shields surround the MTJ cells substantially conformally and thereby can compensate the poles of the free layers of MTJ cells of various geometric cross-sectional shapes and also protect the cells from the adverse effects of extraneous fields. The additional antiferromagnetic and permanent magnetic materials stabilize the shields by exchange or direct coupling.

REFERENCES:
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5757695 (1998-05-01), Shi et al.
patent: 5841692 (1998-11-01), Gallagher et al.
patent: 5917749 (1999-06-01), Chen et al.
patent: 5959880 (1999-09-01), Shi et al.
patent: 6005800 (1999-12-01), Koch et al.
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6219212 (2001-04-01), Gill et al.
patent: 6242770 (2001-06-01), Bronner et al.
patent: 6750540 (2004-06-01), Kim
patent: 6815783 (2004-11-01), Kim et al.

Affiliated with

Also associated with

Rating

Magnetic random access memory designs with patterned and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic random access memory designs with patterned and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory designs with patterned and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3476120