Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2007-11-06
2007-11-06
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257SE27006, C257S295000, C438S048000, C365S171000
Reexamination Certificate
active
11386317
ABSTRACT:
An MRAM array is formed of MTJ cells shaped so as to have their narrowest dimension at the middle of the cell. A preferred embodiment forms the cell into the shape of a kidney or a peanut. Such a shape provides each cell with an artificial nucleation site at the narrowest dimension, where an applied switching field can switch the magnetization of the cell in manner that is both efficient and uniform across the array.
REFERENCES:
patent: 3623038 (1971-11-01), Franklin et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5757695 (1998-05-01), Shi et al.
patent: 5841692 (1998-11-01), Gallagher et al.
patent: 5917749 (1999-06-01), Chen et al.
patent: 5959880 (1999-09-01), Shi et al.
patent: 6005800 (1999-12-01), Koch et al.
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6205053 (2001-03-01), Anthony
patent: 6242770 (2001-06-01), Bronner et al.
patent: 6870761 (2005-03-01), Johnson
patent: 6943040 (2005-09-01), Min et al.
Min Tai
Wang Po Kang
Ackerman Stephen B.
Headway Technologies Inc.
Ho Tu-Tu
Saile Ackerman LLC
LandOfFree
Magnetic random access memory designs with controlled... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic random access memory designs with controlled..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory designs with controlled... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3804279