Magnetic random access memory designs with controlled...

Details Magnetic random access memory designs with controlled... Magnetic random access memory designs with controlled...

2005-09-13

2005-09-13

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C365S055000, C365S066000, C365S171000, C365S173000, C365S225500, C365S230030, C438S673000

Reexamination Certificate

active

06943040

ABSTRACT:
A magnetic tunneling junction (MTJ) memory cell for a magnetic random access memory (MRAM) array is formed as a chain of magnetostatically coupled segments. The segments can be circular, elliptical, lozenge shaped or shaped in other geometrical forms. Unlike the isolated cells of typical MTJ designs which exhibit curling of the magnetization at the cell ends and uncompensated pole structures, the present multi-segmented design, with the segments being magnetostatically coupled, undergoes magnetization switching at controlled nucleation sites by the fanning mode. As a result, the multi-segmented cells of the present invention are not subject to variations in switching fields due to shape irregularities and structural defects.

REFERENCES:
patent: 5757695 (1998-05-01), Shi et al.
patent: 6005800 (1999-12-01), Koch et al.
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6242770 (2001-06-01), Bronner et al.
patent: 6335890 (2002-01-01), Reohr et al.
patent: 6376260 (2002-04-01), Chen et al.
U.S. Appl. No. 10/647,716, filed Aug. 25, 2003, assigned to the same assignee.

Affiliated with

Also associated with

Rating

Magnetic random access memory designs with controlled... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic random access memory designs with controlled..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory designs with controlled... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3438386