Magnetic random access memory array with thin conduction...

Details Magnetic random access memory array with thin conduction... Magnetic random access memory array with thin conduction...

2006-06-27

2006-06-27

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S381000

Reexamination Certificate

active

07067330

ABSTRACT:
An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.

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