Magnetic random access memory array with coupled soft...

Details Magnetic random access memory array with coupled soft... Magnetic random access memory array with coupled soft...

2005-12-27

2005-12-27

Wilson, Christian (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S003000, C438S070000, C257S295000, C257S421000, C257S422000

Reexamination Certificate

active

06979586

ABSTRACT:
An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.

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