Magnetic random access memory and method of manufacturing...

Details Magnetic random access memory and method of manufacturing... Magnetic random access memory and method of manufacturing...

2007-05-04

2010-06-22

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

Reexamination Certificate

active

07741688

ABSTRACT:
A magnetic random access memory includes a magnetoresistive effect element having a fixed layer in which a magnetization direction is fixed, a recording layer in which a magnetization direction is reversible, and a nonmagnetic layer formed between the fixed layer and the recording layer, a hollow portion being formed in a center of the recording layer, and the magnetization directions in the fixed layer and the recording layer taking one of a parallel state and an antiparallel state in accordance with a direction of an electric current supplied between the fixed layer and the recording layer, an insulating layer formed in the hollow portion, a wiring connected to one terminal of the magnetoresistive effect element, and a transistor connected to the other terminal of the magnetoresistive effect element.

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M. Hosomi et al., “A Novel Nonvolatile Memory with Spin Torque Transfer Magnetization Switching: Spin-RAM,” Tech. Dig. Int. Electron Devices Meeting, Washington, DC, pp. 459-462 (2005).

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